Publication Information

Title: High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy

Type: Journal

Info: APPLIED PHYSICS LETTERS 104, 193112 (2014)

Date: 2014-05-05

DOI: http://dx.doi.org/10.1063/1.4878316

Author Information

Name

Institution

Korea Advanced Institute of Science and Technology

Films

Plasma AlN using Unknown

Deposition Temperature = 250C

75-24-1

7727-37-9

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Substrates

Keywords

Notes

229

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