Publication Information

Title: Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas

Type: Journal

Info: Applied Surface Science 349 (2015) 757 - 762

Date: 2015-05-11

DOI: http://dx.doi.org/10.1016/j.apsusc.2015.05.066

Author Information

Name

Institution

Yonsei University

Yonsei University

Yonsei University

Yonsei University

Yonsei University

Yonsei University

Films

Plasma HfON using Unknown

Deposition Temperature = 250C

19962-11-9

7664-41-7

Plasma HfON using Unknown

Deposition Temperature = 250C

19962-11-9

7727-37-9

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

Unknown

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Unknown

Compositional Depth Profiling

XPS, X-ray Photoelectron Spectroscopy

Unknown

Thickness

TEM, Transmission Electron Microscope

Unknown

Interfacial Layer

TEM, Transmission Electron Microscope

Unknown

Capacitance

C-V, Capacitance-Voltage Measurements

Keithley 590 CV Analyzer

Dielectric Constant, Permittivity

C-V, Capacitance-Voltage Measurements

Keithley 590 CV Analyzer

Interface Trap Density

C-V, Capacitance-Voltage Measurements

Keithley 590 CV Analyzer

Hysteresis

C-V, Capacitance-Voltage Measurements

Keithley 590 CV Analyzer

Leakage Current

I-V, Current-Voltage Measurements

Keithley 236

Substrates

Si(100)

Keywords

Notes

431

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