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Sub-10-nm ferroelectric Gd-doped HfO2 layers
Type:
Journal
Info:
Applied Physics Letters 120, 172901 (2022)
Date:
2022-04-16
Author Information
| Name | Institution |
|---|---|
| E. V. Skopin | Grenoble Alps University (UGA) |
| N. Guillaume | Grenoble Alps University (UGA) |
| L. Alrifai | Grenoble Alps University (UGA) |
| Patrice Gonon | Grenoble Alps University (UGA) |
| Ahmad Bsiesy | Grenoble Alps University (UGA) |
Films
Plasma TiN
Plasma Gd:HfO2
Film/Plasma Properties
Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Remanent Polarization
Analysis: P-V, Polarization-Voltage Measurements
Characteristic: Coercive Field
Analysis: P-V, Polarization-Voltage Measurements
Substrates
| SiO2 |
| TiN |
Notes
| 1688 |