Publication Information

Title: Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time

Type: Journal

Info: Applied Physics Letters 107, 014102 (2015)

Date: 2015-06-25

DOI: http://dx.doi.org/10.1063/1.4926366

Author Information

Name

Institution

Eindhoven University of Technology

Eindhoven University of Technology

Eindhoven University of Technology

Films

Deposition Temperature Range = 200-400C

186598-40-3

7727-37-9

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Wet Etch Resistance

Wet Etch

Unknown

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Unknown

Chemical Composition, Impurities

TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis

Unknown

OES

OES, Optical Emission Spectroscopy

Unknown

Thickness

Ellipsometry

Unknown

Refractive Index

Ellipsometry

Unknown

Substrates

Keywords

Notes

FlexAL PEALD SiNx plasma gas residence time study.

331

Disclaimer

I am sure there are papers I have not found. I am sure there is an occasional typo or omission in the database entries. I have hundreds of pre-2009 papers yet to add. As a result, the information provided is not perfect and not complete. Don't blame Plasma-ALD-Guy if the use of information on this site does not work out for you. If you know of publications I have missed or a database entry is wrong, send me an email at: plasma-ald-guy@plasma-ald.com

Follow plasma-ald.com

Follow @PlasmaALDGuy Tweet

Shortcuts



© 2014-2017 plasma-ald.com