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Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
Type:
Journal
Info:
Journal of Vacuum Science & Technology A 38, 062408 (2020)
Date:
2020-10-13
Author Information
| Name | Institution |
|---|---|
| Gilbert B. Rayner | Kurt J. Lesker Company |
| Noel O'Toole | Kurt J. Lesker Company |
| Jeffrey Shallenberger | The Pennsylvania State University |
| Blaine Johs | Film Sense LLC |
Films
Plasma TiN
Plasma TiN
Plasma AlN
Plasma SiNx
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Refractive Index
Analysis: Ellipsometry
Characteristic: Resistivity, Sheet Resistance
Analysis: Ellipsometry
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Resistivity, Sheet Resistance
Analysis: Ellipsometry
Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Compositional Depth Profiling
Analysis: SIMS, Secondary Ion Mass Spectrometry
Substrates
| Si with native oxide |
| SiO2 |
Notes
| 1538 |