| 1 | Growth of aluminum nitride films by plasma-enhanced atomic layer deposition |
| 2 | Enhancement-mode AlGaN/GaN MIS-HEMTs with low threshold voltage hysteresis using damage-free neutral beam etched gate recess |
| 3 | Investigation of hydrogen impurities in PE-ALD AlN thin films by IBA methods |
| 4 | AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition |
| 5 | Direct plasma-enhanced atomic layer deposition of aluminum nitride for water permeation barriers |
| 6 | A film-texture driven piezoelectricity of AlN thin films grown at low temperatures by plasma-enhanced atomic layer deposition |
| 7 | Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures |
| 8 | Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer |
| 9 | AlN PEALD with TMA and forming gas: study of plasma reaction mechanisms |
| 10 | A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs |
| 11 | Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices |
| 12 | Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality |
| 13 | Sub-nanometer heating depth of atomic layer annealing |
| 14 | Surface passivation of GaAs nanowires by the atomic layer deposition of AlN |
| 15 | Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources |
| 16 | Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer |
| 17 | A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects |
| 18 | Structural and optical characterization of low-temperature ALD crystalline AlN |
| 19 | Perspectives on future directions in III-N semiconductor research |
| 20 | Atomic layer deposition of AlN from AlCl3 using NH3 and Ar/NH3 plasma |
| 21 | Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition |
| 22 | Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures |
| 23 | Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3 |
| 24 | Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy |
| 25 | AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers |
| 26 | Template-Based Synthesis of Aluminum Nitride Hollow Nanofibers Via Plasma-Enhanced Atomic Layer Deposition |
| 27 | Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy |
| 28 | Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films |
| 29 | Protective capping and surface passivation of III-V nanowires by atomic layer deposition |
| 30 | A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition |
| 31 | Effect of Film Thickness on the Electrical Properties of AlN Films Prepared by Plasma-Enhanced Atomic Layer Deposition |
| 32 | AlN/GaN heterostructure TFTs with plasma enhanced atomic layer deposition of epitaxial AlN thin film |
| 33 | High performance AlGaN/GaN HEMTs with AlN/SiNx passivation |
| 34 | Low Current Collapse and Low Leakage GaN MIS-HEMT Using AlN/SiN as Gate Dielectric and Passivation Layer |
| 35 | Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition |
| 36 | GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation |
| 37 | Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition |
| 38 | High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors |
| 39 | Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties |
| 40 | Impact of Post Fabrication Annealing PEALD ZrO2 for GaN MOSFETs |
| 41 | Comparative study on nitridation and oxidation plasma interface treatment for AlGaN/GaN MIS-HEMTs with AlN gate dielectric |
| 42 | Practical Challenges of Processing III-Nitride/Graphene/SiC Devices |
| 43 | Selective Deposition of Low Temperature AlN Ohmic Contacts for GaN Devices |
| 44 | TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition |
| 45 | XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition |
| 46 | Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition |
| 47 | Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma |
| 48 | Atomic layer epitaxy for quantum well nitride-based devices |
| 49 | 600 V High-Performance AlGaN/GaN HEMTs with AlN/SiNx Passivation |
| 50 | Crystalline growth of AlN thin films by atomic layer deposition |
| 51 | Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films |
| 52 | PEALD AlN: controlling growth and film crystallinity |
| 53 | GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride |
| 54 | Preparation of Al2O3 and AlN Nanotubes by Atomic Layer Deposition |
| 55 | Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications |
| 56 | Aluminum nitride thin films deposited by hydrogen plasma enhanced and thermal atomic layer deposition |
| 57 | Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation |
| 58 | Effects of interface oxidation on the transport behavior of the two-dimensional-electron-gas in AlGaN/GaN heterostructures by plasma-enhanced-atomic-layer-deposited AlN passivation |
| 59 | Radical Enhanced Atomic Layer Deposition of Metals and Oxides |
| 60 | Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films |
| 61 | Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack |
| 62 | Plasma Enhanced Atomic Layer Deposition on Powders |
| 63 | The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition |
| 64 | Nitride memristors |
| 65 | Atomic Layer Deposition of Aluminum Nitride Thin films from Trimethyl Aluminum (TMA) and Ammonia |
| 66 | Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures |
| 67 | Study on the electrical characteristics of in situ PEALD-passivated HfO2/In0.53Ga0.47As MOSCAP and MOSFET structures |
| 68 | Properties of AlN grown by plasma enhanced atomic layer deposition |
| 69 | Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition |
| 70 | Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures |
| 71 | Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing |
| 72 | Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition |
| 73 | ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs |
| 74 | Performance enhancement of normally-off Al2O3/AlN/GaN MOS-Channel-HEMTs with an ALD-grown AlN interfacial layer |
| 75 | Self-limiting growth of GaN using plasma-enhanced atomic layer deposition |
| 76 | Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure |
| 77 | Formation of aluminum nitride thin films as gate dielectrics on Si(100) |
| 78 | Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition |
| 79 | Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition |
| 80 | High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning |
| 81 | Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer |
| 82 | Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid |
| 83 | Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition |
| 84 | AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing |
| 85 | Semiconductor-like nanofilms assembled with AlN and TiN laminations for nearly ideal graphene-based heterojunction devices |
| 86 | Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition |
| 87 | Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures |
| 88 | Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy |
| 89 | Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition |
| 90 | The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition |
| 91 | Silicon surface passivation with atomic layer deposited aluminum nitride |
| 92 | Atomic Layer Deposition of AlN Thin Films in Three Different Growth Regimes |
| 93 | Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs |
| 94 | Characterization of SiNx/AlN passivation stack with epitaxial AlN grown on AlGaN/GaN heterojunctions by plasma-enhanced atomic layer deposition |
| 95 | Tris(dimethylamido)aluminum(III): An overlooked atomic layer deposition precursor |
| 96 | Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films |
| 97 | Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density |
| 98 | Resolving Impurities in Atomic Layer Deposited Aluminum Nitride through Low Cost, High Efficiency Precursor Design |
| 99 | New materials for memristive switching |
| 100 | Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition |
| 101 | Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics |
| 102 | Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN |
| 103 | Atomic layer deposited silicon dioxide films on nanomechanical silicon nitride resonators |
| 104 | Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers |
| 105 | Investigation of AlGaN/GaN HEMTs Passivated by AlN Films Grown by Atomic Layer Epitaxy |
| 106 | Properties of atomic-layer-deposited ultra-thin AlN films on GaAs surfaces |
| 107 | Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer |
| 108 | Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas |
| 109 | High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy |
| 110 | Compatibility of AlN/SiNx Passivation Technique with High-Temperature Process |
| 111 | Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition |
| 112 | Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT |
| 113 | Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks |
| 114 | Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition |
| 115 | 823-mA/mm Drain Current Density and 945-MW/cm2 Baliga's Figure-of-Merit Enhancement-Mode GaN MISFETs With a Novel PEALD-AlN/LPCVD-Si3N4 Dual-Gate Dielectric |
| 116 | Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method |
| 117 | 650-V Double-Channel Lateral Schottky Barrier Diode With Dual-Recess Gated Anode |
| 118 | PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity |
| 119 | Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering |
| 120 | Experimental and theoretical determination of the role of ions in atomic layer annealing |
| 121 | Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition |
| 122 | Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films |
| 123 | Improved Interface and Transport Properties of AlGaN/GaN MIS-HEMTs With PEALD-Grown AlN Gate Dielectric |
| 124 | Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition |
| 125 | Engineered Tunneling Contacts with Low-Temperature Atomic Layer Deposition of AlN on GaN |
Innatiux is a retained executive recruiting firm with a focus on the search and placement of proven leaders for client companies in the field of high-tech capital equipment and analytical instrumentation. We are seeking WW technical and business leaders with a background in semiconductor deposition to fill confidential senior and executive level positions with our clients. Visit us at: www.innatiux.com
