AlN Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for plasma enhanced atomic layer deposition publications discussing AlN films returned 88 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
2A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
3ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
4AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
5AlN/GaN heterostructure TFTs with plasma enhanced atomic layer deposition of epitaxial AlN thin film
6Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma
7Atomic Layer Deposition of AlN Thin Films in Three Different Growth Regimes
8Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation
9Atomic layer epitaxy for quantum well nitride-based devices
10Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition
11Characterization of SiNx/AlN passivation stack with epitaxial AlN grown on AlGaN/GaN heterojunctions by plasma-enhanced atomic layer deposition
12Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
13Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition
14Compatibility of AlN/SiNx Passivation Technique with High-Temperature Process
15Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT
16Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
17Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
18Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
19Crystalline growth of AlN thin films by atomic layer deposition
20Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
21Effect of Film Thickness on the Electrical Properties of AlN Films Prepared by Plasma-Enhanced Atomic Layer Deposition
22Effects of interface oxidation on the transport behavior of the two-dimensional-electron-gas in AlGaN/GaN heterostructures by plasma-enhanced-atomic-layer-deposited AlN passivation
23Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures
24Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
25Engineered Tunneling Contacts with Low-Temperature Atomic Layer Deposition of AlN on GaN
26Enhancement-mode AlGaN/GaN MIS-HEMTs with low threshold voltage hysteresis using damage-free neutral beam etched gate recess
27Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy
28Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
29Fabrication of AlN/BN bishell hollow nanofibers by electrospinning and atomic layer deposition
30GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride
31GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
32Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
33Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
34Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
35Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
36High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
37High performance AlGaN/GaN HEMTs with AlN/SiNx passivation
38High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy
39High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning
40Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
41Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
42Impact of Post Fabrication Annealing PEALD ZrO2 for GaN MOSFETs
43Improved Interface and Transport Properties of AlGaN/GaN MIS-HEMTs With PEALD-Grown AlN Gate Dielectric
44Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
45Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
46Investigation of AlGaN/GaN HEMTs Passivated by AlN Films Grown by Atomic Layer Epitaxy
47Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
48Low-temperature grown wurtzite InxGa1-xN thin films via hollow cathode plasma-assisted atomic layer deposition
49Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
50Low-temperature self-limiting atomic layer deposition of wurtzite InN on Si(100)
51Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
52New materials for memristive switching
53Nitride memristors
54Optical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
55Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition
56Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
57PEALD AlN: controlling growth and film crystallinity
58Performance enhancement of normally-off Al2O3/AlN/GaN MOS-Channel-HEMTs with an ALD-grown AlN interfacial layer
59Perspectives on future directions in III-N semiconductor research
60Plasma Enhanced Atomic Layer Deposition on Powders
61Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
62Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas
63Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
64Plasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films
65Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
66Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN
67Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
68Properties of AlN grown by plasma enhanced atomic layer deposition
69Properties of atomic-layer-deposited ultra-thin AlN films on GaAs surfaces
70Radical Enhanced Atomic Layer Deposition of Metals and Oxides
71Selective Deposition of Low Temperature AlN Ohmic Contacts for GaN Devices
72Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
73Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
74Semiconductor-like nanofilms assembled with AlN and TiN laminations for nearly ideal graphene-based heterojunction devices
75Silicon surface passivation with atomic layer deposited aluminum nitride
76Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
77Structural and optical characterization of low-temperature ALD crystalline AlN
78Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures
79Study on the electrical characteristics of in situ PEALD-passivated HfO2/In0.53Ga0.47As MOSCAP and MOSFET structures
80Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
81Template-assisted synthesis of III-nitride and metal-oxide nano-heterostructures using low-temperature atomic layer deposition for energy, sensing, and catalysis applications (Presentation Recording)
82Template-Based Synthesis of Aluminum Nitride Hollow Nanofibers Via Plasma-Enhanced Atomic Layer Deposition
83The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition
84The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
85Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
86TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
87Tris(dimethylamido)aluminum(III): An overlooked atomic layer deposition precursor
88XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition

Disclaimer

I am sure there are papers I have not found. I am sure there is an occasional typo or omission in the database entries. I have hundreds of pre-2009 papers yet to add. As a result, the information provided is not perfect and not complete. Don't blame Plasma-ALD-Guy if the use of information on this site does not work out for you. If you know of publications I have missed or a database entry is wrong, send me an email at: plasma-ald-guy@plasma-ald.com

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