Publication Information

Title: AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD

Type: Journal

Info: Microelectronic Engineering 109 (2013) 378 - 380

Date: 2013-04-28

DOI: http://dx.doi.org/10.1016/j.mee.2013.04.020

Author Information

Name

Institution

CEA - LETI MINATEC

CEA - LETI MINATEC

CEA - LETI MINATEC

CEA - LETI MINATEC

CEA - LETI MINATEC

Laboratoire d'Analyse et d'Architecture des Systèmes (LAAS)

Films

Deposition Temperature = 250C

75-24-1

7732-18-5

Deposition Temperature = 250C

75-24-1

7782-44-7

Deposition Temperature = 250C

75-24-1

7732-18-5

7727-37-9

Deposition Temperature = 250C

75-24-1

7782-44-7

7727-37-9

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Capacitance

C-V, Capacitance-Voltage Measurements

Unknown

Transistor Characteristics

Transistor Characterization

Unknown

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

Unknown

Substrates

AlGaN

Keywords

Notes

564

Disclaimer

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