Publication Information

Title: Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

Type: Journal

Info: Applied Physics Letters 107, 093507 (2015)

Date: 2015-08-24

DOI: http://dx.doi.org/10.1063/1.4930076

Author Information

Name

Institution

IMEC

IMEC

IMEC

IMEC

IMEC

IMEC

IMEC

IMEC

ASM Microchemistry Oy

IMEC

IMEC

Films

Plasma SiNx using Unknown

Deposition Temperature = 300C

7803-62-5

7727-37-9

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Electrical Properties

Unknown

Unknown

Interface Trap Density

Unknown

Unknown

Threshold Voltage Shift

Unknown

Unknown

Substrates

AlGaN

Keywords

Notes

388

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