Publication Information

Title: Barrier Characteristics of ZrN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Using Tetrakis(diethylamino)zirconium Precursor

Type: Journal

Info: Japanese Journal of Applied Physics, Vol. 46, No. 7A, 2007, pp. 4085-4088

Date: 2007-07-04

DOI: http://dx.doi.org/10.1143/JJAP.46.4085

Author Information

Name

Institution

Pusan National University

Hanyang University

Pusan National University

Hanyang University

Pusan National University

Films

Plasma ZrN using Custom

Deposition Temperature Range = 150-400C

13801-49-5

7727-37-9

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Resistivity, Sheet Resistance

Four-point Probe

Unknown

Unknown

XRD, X-Ray Diffraction

Unknown

Chemical Composition, Impurities

AES, Auger Electron Spectroscopy

Unknown

Compositional Depth Profiling

AES, Auger Electron Spectroscopy

Unknown

Unknown

Etch Pit Test

Unknown

Unknown

Anneal

Unknown

Barrier Characteristics

AES, Auger Electron Spectroscopy

Unknown

Barrier Characteristics

XRD, X-Ray Diffraction

Unknown

Barrier Characteristics

Etch Pit Test

Unknown

Substrates

p-type SOI(100)

Keywords

Remote Plasma Enhanced Atomic Layer Deposition

Zirconium Nitride

Diffusion Barrier

Notes

Substrates pirahna and HF cleaned

21

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