Publication Information

Title: Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology

Type: Journal

Info: Journal of Vacuum Science & Technology A 32, 031506 (2014)

Date: 2014-02-28

DOI: http://dx.doi.org/10.1116/1.4868215

Author Information

Name

Institution

Tyndall National Institute, University College Cork

Tyndall National Institute, University College Cork

Tyndall National Institute, University College Cork

Tyndall National Institute, University College Cork

Tyndall National Institute, University College Cork

Tyndall National Institute, University College Cork

Tyndall National Institute, University College Cork

Films

Deposition Temperature Range N/A

3275-24-9

7727-37-9

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Resistivity, Sheet Resistance

I-V, Current-Voltage Measurements

HP 4156A

Chemical Composition, Impurities

TOF-SIMS, Time of Flight Secondary Ion Mass Spectrometry

Unknown

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

TEM, Transmission Electron Microscope

JEOL 2100

Substrates

SiO2

Keywords

Notes

n-type Si(100) substrates HF-dipped, O3 cleaned, and DI rinsed. 1 micron thermal SiO2 grown.

138

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