Publication Information

Title: GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation

Type: Journal

Info: J. Vac. Sci. Technol. B 31(5), Sep/Oct 2013

Date: 2013-07-30

DOI: http://dx.doi.org/10.1116/1.4816477

Author Information

Name

Institution

University of Florida

University of Florida

University of Florida

University of Florida

University of Florida

University of Florida

University of Florida

University of Florida

Oak Ridge National Laboratory

IQE

IQE

Films

Deposition Temperature = 300C

75-24-1

7727-37-9

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

J.A. Woollam EC110

Refractive Index

Ellipsometry

J.A. Woollam EC110

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Perkin Elmer 5100

Compositional Depth Profiling

AES, Auger Electron Spectroscopy

Perkin Elmer 660

On/Off Current Ratio

Unknown

HP 4156B Semiconductor Parameter Analyzer

Transconductance

Unknown

HP 4156B Semiconductor Parameter Analyzer

Substrates

Keywords

HEMT, High Electron Mobility Transistor

Notes

Substrate surface cleaned with O3 and NH4OH before ALD.

Additional HEMT electrical properties are reported.

130

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