Development of Space Divided PE-ALD System and Process Design for Gap-Fill Process in Advanced Memory Devices

Type:
Journal
Info:
J. Korean Inst. Surf. Eng. Vol.53, No.3, 2020.
Date:
2020-06-29

Author Information

Name Institution
Baek-Ju LeeHanwha Corporation
Jae-Soon HwangHanwha Corporation
Dong-Won SeoHanwha Corporation
Jae-Wook ChoiHanwha Corporation

Films

Plasma SiO2


Plasma SiO2

Hardware used: Custom Spatial


CAS#: 7782-44-7

CAS#: 7727-37-9

CAS#: 7440-59-7

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Uniformity
Analysis: Ellipsometry

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Conformality, Step Coverage
Analysis: TEM, Transmission Electron Microscope

Characteristic: Wet Etch Resistance
Analysis: Custom

Characteristic: Stress
Analysis: -

Substrates

Si(100)

Notes

1514