Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration

Type:
Conference Proceedings
Info:
2010 IEEE International 3D Systems Integration Conference (3DIC)
Date:
2010-11-16

Author Information

Name Institution
J. D. ReedRTI International
S. GoodwinRTI International
C. GregoryRTI International
D. TempleRTI International

Films

Plasma TiN


Thermal TiN


Thermal Ru


Film/Plasma Properties

Characteristic: Morphology, Roughness, Topography
Analysis: -

Characteristic: Resistivity, Sheet Resistance
Analysis: -

Characteristic: Conformality, Step Coverage
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy

Substrates

SiO2

Notes

731