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Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies
Type:
Journal
Info:
ACS Appl. Mater. Interfaces, 2017, 9 (2), pp 1858-1869
Date:
2016-12-06
Author Information
| Name | Institution |
|---|---|
| Tahsin Faraz | Eindhoven University of Technology |
| Maarten van Drunen | Eindhoven University of Technology |
| Harm C. M. Knoops | Eindhoven University of Technology |
| Anupama Mallikarjunan | Air Products |
| Iain Buchanan | Air Products |
| Dennis M. Hausmann | Lam Research Corporation |
| Jon Henri | Lam Research Corporation |
| Erwin (W.M.M.) Kessels | Eindhoven University of Technology |
Films
Plasma SiNx
Plasma SiNx
Film/Plasma Properties
Characteristic: Density
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Characteristic: Conformality, Step Coverage
Analysis: TEM, Transmission Electron Microscope
Characteristic: Wet Etch Resistance
Analysis: Wet Etch
Characteristic: Refractive Index
Analysis: Ellipsometry
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy
Substrates
| SiO2 |
Notes
| 837 |