Publication Information

Title: Gadolinium nitride films deposited using a PEALD based process

Type: Journal

Info: Journal of Crystal Growth Volume 338, Issue 1, 1 January 2012, Pages 111-117

Date: 2011-10-28

DOI: http://dx.doi.org/10.1016/j.jcrysgro.2011.10.049

Author Information

Name

Institution

University of Liverpool

SAFC Hitech

SAFC Hitech

Hanyang University

University of Liverpool

Films

Deposition Temperature Range N/A

39470-11-6

1333-74-0

Deposition Temperature Range N/A

39470-11-6

1333-74-0

7727-37-9

Deposition Temperature Range N/A

39470-11-6

7727-37-9

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

Rudolf AutoEL IV

Chemical Composition, Impurities

EDS, EDX, Energy Dispersive X-ray Spectroscopy

Oxford Instruments Inca X-act model 51 EDX detector

Compositional Depth Profiling

AES, Auger Electron Spectroscopy

PHI 680 FEAES

Compositional Depth Profiling

MEIS, Medium Energy Ion Scattering

Unknown

Microstructure

XRD, X-Ray Diffraction

Rigaku Miniflex Diffractometer

Substrates

Si with native oxide

Keywords

Notes

H2 plasma pump/purge cycle used to remove O2 from system prior to GdN deposition.

TaN capped GdN to prevent oxidation.

144

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