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Gadolinium nitride films deposited using a PEALD based process
Type:
Journal
Info:
Journal of Crystal Growth Volume 338, Issue 1, 1 January 2012, Pages 111-117
Date:
2011-10-28
Author Information
| Name | Institution |
|---|---|
| Ziwen Fang | University of Liverpool |
| Paul A. Williams | SAFC Hitech |
| Rajesh Odedra | SAFC Hitech |
| Hyeongtag Jeon | Hanyang University |
| Richard Potter | University of Liverpool |
Films
Plasma GdN
Plasma GdN
Plasma GdN
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Characteristic: Compositional Depth Profiling
Analysis: AES, Auger Electron Spectroscopy
Characteristic: Compositional Depth Profiling
Analysis: MEIS, Medium Energy Ion Scattering
Characteristic: Microstructure
Analysis: XRD, X-Ray Diffraction
Substrates
| Si with native oxide |
Notes
| H2 plasma pump/purge cycle used to remove O2 from system prior to GdN deposition. |
| TaN capped GdN to prevent oxidation. |
| 144 |