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Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
Type:
Journal
Info:
Materials Research Bulletin 83 (2016) 597-602
Date:
2016-07-10
Author Information
| Name | Institution |
|---|---|
| Da Jung Lee | Electronics and Telecommunication Research Institute, (ETRI) |
| Jung Wook Lim | Electronics and Telecommunication Research Institute, (ETRI) |
| Jae Kyoung Mun | Electronics and Telecommunication Research Institute, (ETRI) |
| Sun Jin Yun | Electronics and Telecommunication Research Institute, (ETRI) |
Films
Plasma Al2O3
Plasma AlON
Film/Plasma Properties
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Substrates
| Si(100) |
Notes
| Compares PEALD with RPALD. Does not explain difference or hardware used for RPALD. |
| 862 |