Investigation of AlGaN/GaN HEMTs Passivated by AlN Films Grown by Atomic Layer Epitaxy

Type:
Journal
Info:
2013 The International Conference on Compound Semiconductor Manufacturing Technology
Date:
2013-05-13

Author Information

Name Institution
Andrew D. KoehlerU.S. Naval Research Laboratory
Neeraj NepalU.S. Naval Research Laboratory
Travis J. AndersonU.S. Naval Research Laboratory
Marko J. TadjerU.S. Naval Research Laboratory
Karl D. HobartU.S. Naval Research Laboratory
Charles R. Eddy, Jr.U.S. Naval Research Laboratory
Francis J. KubU.S. Naval Research Laboratory

Films


Film/Plasma Properties

Substrates

Notes

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