Publication Information

Title: AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers

Type: Journal

Info: 2013 Semicond. Sci. Technol. 28, 074015

Date: 2013-01-04

DOI: http://dx.doi.org/10.1088/0268-1242/28/7/074015

Author Information

Name

Institution

Hong Kong University of Science and Technology

Chinese Academy of Sciences

Films

Plasma AlN using Unknown

Deposition Temperature = 300C

75-24-1

7727-37-9

1333-74-0

Thermal Al2O3 using Unknown

Deposition Temperature = 300C

75-24-1

7732-18-5

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

TEM, Transmission Electron Microscope

Unknown

Fixed Charge

C-V, Capacitance-Voltage Measurements

Agilent B1505A Semiconductor Device Analyzer

Capacitance

C-V, Capacitance-Voltage Measurements

Agilent B1505A Semiconductor Device Analyzer

Interface Trap Density

C-V, Capacitance-Voltage Measurements

Agilent B1505A Semiconductor Device Analyzer

Compositional Depth Profiling

XPS, X-ray Photoelectron Spectroscopy

Unknown

Substrates

GaN

Keywords

Passivation

Notes

581

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