Publication Information

Title: Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode

Type: Journal

Info: ACS Appl. Mater. Interfaces, 2015, 7 (28), pp 15587-15592

Date: 2015-06-30

DOI: http://dx.doi.org/10.1021/acsami.5b04303

Author Information

Name

Institution

Korean Basic Science Institute

Pusan National University

Films

Thermal HfZrO2 using Unknown

Deposition Temperature = 280C

175923-04-3

352535-01-4

10028-15-6

Thermal HfZrSiO using Unknown

Deposition Temperature = 280C

175923-04-3

352535-01-4

0-0-0

10028-15-6

Plasma TiN using Unknown

Deposition Temperature = 270C

3275-24-9

7727-37-9

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

Philips X-pert APD

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

PHI-Quantum 2000

Dielectric Constant, Permittivity

C-V, Capacitance-Voltage Measurements

Keithley 590 CV Analyzer

EOT, Equivalent Oxide Thickness

C-V, Capacitance-Voltage Measurements

Keithley 590 CV Analyzer

Leakage Current

I-V, Current-Voltage Measurements

Keithley 590 CV Analyzer

Substrates

TiN

Keywords

Notes

371

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