O3, Ozone, CAS# 10028-15-6

Plasma Enhanced Atomic Layer Deposition Film Publications

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NumberTitle
1Thermal and plasma enhanced atomic layer deposition of SiO2 using commercial silicon precursors
2Plasma enhanced atomic layer deposition of Ga2O3 thin films
3Resistive switching in HfO2-based atomic layer deposition grown metal-insulator-metal structures
4Atomic Layer Deposition of La2O3 Thin Films by Using an Electron Cyclotron Resonance Plasma Source
5Enhancement of the Electrical Properties of Ga-doped ZnO Thin Films on Polycarbonate Substrates by Using a TiO2 Buffer Layer
6Breakdown and Protection of ALD Moisture Barrier Thin Films
7In situ diagnostics for studying gas-surface reactions during thermal and plasma-assisted atomic layer deposition
8Surface Reaction Mechanisms during Ozone and Oxygen Plasma Assisted Atomic Layer Deposition of Aluminum Oxide
9Film properties of low temperature HfO2 grown with H2O, O3, or remote O2-plasma
10Atomic layer deposition of tin oxide using tetraethyltin to produce high-capacity Li-ion batteries
11Improvements on Interface Reliability and Capacitance Dispersion of Fluorinated ALD-Al2O3 Gate Dielectrics by CF4 Plasma Treatment
12Silicon dioxide deposition behavior via ALD using BTBAS with ozone or O2 plasma
13Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
14Influence of oxygen source on the ferroelectric properties of ALD grown Hf1-xZrxO2 films
15Synthesis and Characterization of Tin Oxide By Atomic Layer Deposition for Solid-State Batteries
16The Influence of Technology and Switching Parameters on Resistive Switching Behavior of Pt/HfO2/TiN MIM Structures
17Atomic layer deposition of B2O3/SiO2 thin films and their application in an efficient diffusion doping process
18Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator
19Process Control of Atomic Layer Deposition Molybdenum Oxide Nucleation and Sulfidation to Large-Area MoS2 Monolayers
20High wet-etch resistance SiO2 films deposited by plasma-enhanced atomic layer deposition with 1,1,1-tris(dimethylamino)disilane
21Alumina films as gas barrier layers grown by spatial atomic layer deposition with trimethylaluminum and different oxygen sources
22Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
23Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
24Compositional and electrical modulation of niobium oxide thin films deposited by plasma-enhanced atomic layer deposition
25Interaction of hydrogen with hafnium dioxide grown on silicon dioxide by the atomic layer deposition technique
26Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide
27Plasma-Enhanced ALD of TiO2 Using a Novel Cyclopentadienyl Alkylamido Precursor [Ti(CpMe)(NMe2)3] and O2 Plasma
28Atomic layer deposition of B2O3/SiO2 thin films and their application in an efficient diffusion doping process
29Comparison of thermal, plasma-enhanced and layer by layer Ar plasma treatment atomic layer deposition of Tin oxide thin films
30Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
31Atomic layer deposition of B2O3/SiO2 thin films and their application in an efficient diffusion doping process
32Influence of Surface Temperature on the Mechanism of Atomic Layer Deposition of Aluminum Oxide Using an Oxygen Plasma and Ozone
33Influence of oxidant source on the property of atomic layer deposited Al2O3 on hydrogen-terminated Si substrate
34Atmospheric pressure plasma enhanced spatial atomic layer deposition of SnOx as conductive gas diffusion barrier
35Low temperature temporal and spatial atomic layer deposition of TiO2 films
36Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications
37Pt/Ta2O5/HfO2-x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash
38Improvements on Interface Reliability and Capacitance Dispersion of Fluorinated ALD-Al2O3 Gate Dielectrics by CF4 Plasma Treatment
39Influence of oxygen source on the ferroelectric properties of ALD grown Hf1-xZrxO2 films
40A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
41Influence of oxygen source on the ferroelectric properties of ALD grown Hf1-xZrxO2 films
42Comparative study of ALD SiO2 thin films for optical applications
43The Sandwich Structure of Ga-Doped ZnO Thin Films Grown via H2O-, O2-, and O3-Based Atomic Layer Deposition
44Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al2O3
45Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator
46Lanthanum-Oxide Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition
47Designing high performance precursors for atomic layer deposition of silicon oxide
48Manganese oxide films with controlled oxidation state for water splitting devices through a combination of atomic layer deposition and post-deposition annealing
49Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
50Integration of Atomic Layer Deposited Al2O3 Dielectrics with Graphene
51Electrical Characterization of Metal-Insulator-Semiconductor Capacitors Having Double-Layered Atomic-Layer-Deposited Al2O3 and ZnO for Transparent Thin Film Transistor Applications
52Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate