TEMAZr, (EtMeN)4Zr, [(C2H5)(CH3)N]4Zr, Tetrakis(EthylMethylAmido) Zirconium, Zirconium Ethylmethylamide, CAS# 175923-04-3

Where to buy

NumberVendorRegionLink
1Pegasus Chemicals🇬🇧Tetrakis(ethylmethylamido)zirconium(IV)
2DOCK/CHEMICALS🇩🇪Tetrakis(ethylmethylamido)zirconium
3Gelest🇺🇸Zirconium Tetrakis(Ethylmethylamide)
4Strem Chemicals, Inc.🇺🇸Tetrakis(ethylmethylamino)zirconium(IV) 99% TEMAZ, contained in 50 ml cylinder for CVD/ALD
5Strem Chemicals, Inc.🇺🇸Tetrakis(ethylmethylamino)zirconium, 99% TEMAZ
6Ereztech🇺🇸Tetrakis(ethylmethylamino) zirconium

www.plasma-ald.com does not endorse any chemical suppliers. These links are provided for the benefit of our users. If a link goes bad, let us know.

If you would like your company's precursor products listed, or your existing listing changed or removed, send me an email.


Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 33 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Structural and electrical properties of ultra-thin high-k ZrO2 film on nitride passivated Ge(100) prepared by PEALD
2Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
3Effect of Plasma on Characteristics of Zirconium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition
4Investigating the interface characteristics of high-k ZrO2/SiO2 stacked gate insulator grown by plasma-enhanced atomic layer deposition for improving the performance of InSnZnO thin film transistors
5Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
6Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics
7Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
8Correlation between ferroelectricity and ferroelectric orthorhombic phase of HfxZr1-xO2 thin films using synchrotron x-ray analysis
9Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
10High Dielectric Constant ZrO2 Films by Atomic Layer Deposition Technique on Germanium Substrates
11Comparison of chemical stability and corrosion resistance of group IV metal oxide films formed by thermal and plasma-enhanced atomic layer deposition
12XPS study of homemade plasma enhanced atomic layer deposited La2O3/ZrO2 bilayer thin films
13Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics
14Room-temperature atomic layer deposition of ZrO2 using tetrakis(ethylmethylamino)zirconium and plasma-excited humidified argon
15Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
16RT Atomic Layer Deposition of ZrO2 By Using Plasma Excited Water Vapor
17Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
18Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect
19Atomic-layer-deposited silver and dielectric nanostructures for plasmonic enhancement of Raman scattering from nanoscale ultrathin films
20PEALD grown high-k ZrO2 thin films on SiC group IV compound semiconductor
21Double nitridation of crystalline ZrO2/Al2O3 buffer gate stack with high capacitance, low leakage and improved thermal stability
22Wideband frequency and in situ characterization of ultra thin ZrO2 and HfO2 films for integrated MIM capacitors
23Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen
24Defect-sealing of Al2O3/ZrO2 multilayer for barrier coating by plasma-enhanced atomic layer deposition process
25The Formation of an Almost Full Atomic Monolayer via Surface Modification by N2O-Plasma in Atomic Layer Deposition of ZrO2 Thin Films
26Pentacene-Thin Film Transistors with ZrO2 Gate Dielectric Layers Deposited by Plasma-Enhanced Atomic Layer Deposition
27Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes
28Comparative study on chemical stability of dielectric oxide films under HF wet and vapor etching for radiofrequency microelectromechanical system application
29Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen
30PEALD ZrO2 Films Deposition on TiN and Si Substrates
31PEALD of Zirconium Oxide Using Tetrakis(ethylmethylamino)zirconium and Oxygen
32Permeation barrier properties of an Al2O3/ZrO2 multilayer deposited by remote plasma atomic layer deposition
33Ferroelectricity of HfxZr1-xO2 thin films fabricated by 300°C low temperature process with plasma-enhanced atomic layer deposition