Publication Information

Title: Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition

Type: Journal

Info: J. Vac. Sci. Technol. A 21(5), Sep/Oct 2003

Date: 2003-08-14

DOI: http://dx.doi.org/10.1116/1.1590963

Author Information

Name

Institution

Korea Advanced Institute of Science and Technology

Korea Advanced Institute of Science and Technology

Films

Plasma TiAlN using Custom

Deposition Temperature Range N/A

7550-45-0

7446-70-0

7727-37-9

1333-74-0

7664-41-7

Plasma TiN using Custom

Deposition Temperature Range N/A

7550-45-0

7727-37-9

1333-74-0

Plasma AlN using Custom

Deposition Temperature Range N/A

7446-70-0

7664-41-7

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Chemical Composition, Impurities

RBS, Rutherford Backscattering Spectrometry

Unknown

Chemical Composition, Impurities

TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis

Unknown

Thickness

Profilometry

Tencor Alpha-Step Profilometer

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

Unknown

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

TEM, Transmission Electron Microscope

Unknown

Substrates

Keywords

Diffusion Barrier

Interconnect

Notes

89

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