Publication Information

Title: Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor

Type: Journal

Info: J. Vac. Sci. Technol. A 22(1), Jan/Feb 2004

Date: 2004-01-01

DOI: http://dx.doi.org/10.1116/1.1624285

Author Information

Name

Institution

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Pusan National University

Films

Plasma TiN using Custom

Deposition Temperature Range = 175-350C

3275-24-9

1333-74-0

Plasma TiN using Custom

Deposition Temperature Range = 175-350C

3275-24-9

7727-37-9

1333-74-0

Plasma TiN using Custom

Deposition Temperature Range = 175-350C

3275-24-9

7727-37-9

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Diffusion Barrier Properties

XRD, X-Ray Diffraction

Unknown

Resistivity, Sheet Resistance

Four-point Probe

Unknown

Chemical Composition, Impurities

AES, Auger Electron Spectroscopy

Unknown

Bonding States

XPS, X-ray Photoelectron Spectroscopy

Unknown

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

TEM, Transmission Electron Microscope

Unknown

Conformality, Step Coverage

TEM, Transmission Electron Microscope

Unknown

Thickness

AES, Auger Electron Spectroscopy

Unknown

Thickness

TEM, Transmission Electron Microscope

Unknown

Substrates

SiO2

Keywords

Diffusion Barrier

Notes

SiO2 cleaned with pirahna solution for organics removal

N2 plasma films better than H2 or N2/H2 plasma films

44

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