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Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization
Type:
Journal
Info:
Journal of Vacuum Science & Technology A 34, 041504 (2016)
Date:
2016-05-09
Author Information
| Name | Institution |
|---|---|
| Jun Beom Kim | Yeungnam University |
| Soo-Hyun Kim | Yeungnam University |
| Won Seok Han | UP Chemical |
| Do-Joong Lee | Brown University |
Films
Plasma WC
Film/Plasma Properties
Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Characteristic: Conformality, Step Coverage
Analysis: TEM, Transmission Electron Microscope
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Work Function
Analysis: UPS, Ultraviolet Photoemission Spectroscopy
Characteristic: Diffusion Barrier Properties
Analysis: Custom
Substrates
| SiO2 |
Notes
| 843 |