Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten

Type:
Journal
Info:
Journal of The Electrochemical Society, 150 (10) C740-C744 (2003)
Date:
2003-09-02

Author Information

Name Institution
Do-Heyoung KimChonnam National University
Young Jae KimChonnam National University
Yo Soon SongChonnam National University
Byung-Teak LeeChonnam National University
Jin Hyeok KimChonnam National University
Seigi SuhHarvard University
Roy GordonHarvard University

Films

Plasma WC


Plasma WC



Thermal WC


Film/Plasma Properties

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Conformality, Step Coverage
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Oxidation Resistance
Analysis: Four-point Probe

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Substrates

SiO2

Notes

52