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Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
Type:
Journal
Info:
2013 J. Phys. D: Appl. Phys. 46 505502
Date:
2013-10-21
Author Information
| Name | Institution |
|---|---|
| Alexander Pyymaki Perros | Aalto University |
| Hanna Hakola | Tampere University of Technology |
| Timo Sajavaara | University of Jyväskylä |
| Teppo Huhtio | Aalto University |
| Harri Lipsanen | Aalto University |
Films
Plasma AlN
Plasma AlN
Film/Plasma Properties
Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: SERS, Surface Enhanced Raman Scattering
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Refractive Index
Analysis: Ellipsometry
Substrates
| Silicon |
Notes
| 585 |