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Atomic layer deposition of titanium nitride from TDMAT precursor
Type:
Journal
Info:
Microelectronic Engineering 86 (2009) 72-77
Date:
2008-10-02
Author Information
| Name | Institution |
|---|---|
| Jan Musschoot | Ghent University |
| Qi Xie | Fudan University |
| Davy Deduytsche | Ghent University |
| Sven Van den Berghe | SCK-CEN |
| Ronald L. Van Meirhaeghe | Ghent University |
| Christophe Detavernier | Ghent University |
Films
Film/Plasma Properties
Characteristic: Diffusion Barrier Properties
Analysis: XRD, X-Ray Diffraction
Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy
Substrates
| SiO2 |
| Si(100) |
Notes
| Substrates RCA cleaned. |
| Si(100) substrates HF dipped for diffusion barrier measurements. |
| Resistivity decreases with increasing plasma power, increasing plasma time, and increasing film thickness. |
| Reference 11 might be a good read to compare different thin film thickness measurement techniques. |
| 92 |