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High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
Type:
Journal
Info:
J. Vac. Sci. Technol. B 32(5), Sep/Oct 2014
Date:
2014-07-21
Author Information
| Name | Institution |
|---|---|
| Ya-Hsi Hwang | University of Florida |
| Shihyun Ahn | University of Florida |
| Dong Chen | University of Florida |
| Fan Ren | University of Florida |
| Brent P. Gila | University of Florida |
| David Hays | University of Florida |
| S. J. Pearton | University of Florida |
| C-F Lo | IQE |
| Jerry W. Johnson | IQE |
Films
Plasma AlN
Film/Plasma Properties
Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Characteristic: Refractive Index
Analysis: -
Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Characteristic: DC Characteristics
Analysis: -
Characteristic: DC Characteristics
Analysis: -
Substrates
Notes
| Substrate surface cleaned with O3 and NH4OH before ALD. |
| AlN gate dielectric also acts as a passivation layer. |
| 131 |