Publication Information

Title: High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors

Type: Journal

Info: J. Vac. Sci. Technol. B 32(5), Sep/Oct 2014

Date: 2014-07-21

DOI: http://dx.doi.org/10.1116/1.4891966

Author Information

Name

Institution

University of Florida

University of Florida

University of Florida

University of Florida

University of Florida

University of Florida

University of Florida

IQE

IQE

Films

Deposition Temperature = 300C

75-24-1

7727-37-9

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Breakdown Voltage

I-V, Current-Voltage Measurements

Unknown

Refractive Index

Unknown

Unknown

Chemical Composition, Impurities

AES, Auger Electron Spectroscopy

Unknown

DC Characteristics

Unknown

Tektronix 370A Curve Tracer

DC Characteristics

Unknown

HP 4156B Semiconductor Parameter Analyzer

Substrates

Keywords

HEMT, High Electron Mobility Transistor

Notes

Substrate surface cleaned with O3 and NH4OH before ALD.

AlN gate dielectric also acts as a passivation layer.

131

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