|1||Strem Chemicals, Inc.||Trimethylindium, 98+% (99.9+%-In)|
|2||Strem Chemicals, Inc.||Trimethylindium, elec. gr. (99.999%-In)|
|3||Strem Chemicals, Inc.||Trimethylindium, elec. gr. (99.999%-In) contained in 50 ml electropolished cylinder for CVD/ALD|
www.plasma-ald.com does not endorse any chemical suppliers. These links are provided for the benefit of our users. If a link goes bad, let us know.
If you would like your company's precursor products listed, or your existing listing changed or removed, send us an email.
Your search for publications using this chemistry returned 15 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.
|1||Atomic layer epitaxy for quantum well nitride-based devices|
|2||Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures|
|3||Perspectives on future directions in III-N semiconductor research|
|4||Low-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys|
|5||Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures|
|6||Low-temperature grown wurtzite InxGa1-xN thin films via hollow cathode plasma-assisted atomic layer deposition|
|7||Atomic layer epitaxy for quantum well nitride-based devices|
|8||Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy|
|9||Influence of N2/H2 and N2 plasma on binary III-nitride films prepared by hollow-cathode plasma-assisted atomic layer deposition|
|10||Low-temperature grown wurtzite InxGa1-xN thin films via hollow cathode plasma-assisted atomic layer deposition|
|11||Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures|
|12||Low-temperature self-limiting atomic layer deposition of wurtzite InN on Si(100)|
|13||Low-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys|
|14||Perspectives on future directions in III-N semiconductor research|
|15||Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods|
I am sure there are papers I have not found. I am sure there is an occasional typo or omission in the database entries. If you know of publications I have missed or a database entry is wrong, send me an email at: firstname.lastname@example.org
© 2014-2018 plasma-ald.com