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Low-Temperature Atomic Layer Deposition of High Purity, Smooth, Low Resistivity Copper Films by Using Amidinate Precursor and Hydrogen Plasma
Type:
Journal
Info:
Chem. Mater. 2015, 27, 5988-5996
Date:
2015-08-14
Author Information
| Name | Institution |
|---|---|
| Zheng Guo | Beijing Institute of Graphic Communication |
| Hao Li | Peking University |
| Qiang Chen | Beijing Institute of Graphic Communication |
| Lijun Sang | Beijing Institute of Graphic Communication |
| Lizhen Yang | Beijing Institute of Graphic Communication |
| Zhongwei Liu | Beijing Institute of Graphic Communication |
| Xinwei Wang | Peking University |
Films
Film/Plasma Properties
Characteristic: Thickness
Analysis: Profilometry
Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Conformality, Step Coverage
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Characteristic: Deposition Kinetics, Reaction Mechanism
Analysis: QCM, Quartz Crystal Microbalance
Characteristic: Deposition Kinetics, Reaction Mechanism
Analysis: OES, Optical Emission Spectroscopy
Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Characteristic: Microstructure
Analysis: Electron Diffraction
Substrates
| Silicon |
| Glass |
Notes
| 504 |