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Diffusion barrier properties of transition metal thin films grown by plasma-enhanced atomic-layer deposition
Type:
Journal
Info:
Journal of Vacuum Science & Technology B 20, 1321-1326 (2002)
Date:
2002-04-22
Author Information
| Name | Institution |
|---|---|
| Hyungjun Kim | IBM |
| C. Cabral | IBM |
| C. Lavoie | IBM |
| S. M. Rossnagel | IBM |
Films
Plasma Ta
Film/Plasma Properties
Characteristic: Diffusion Barrier Properties
Analysis: XRD, X-Ray Diffraction
Characteristic: Diffusion Barrier Properties
Analysis: Optical Scattering
Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Characteristic: Conformality, Step Coverage
Analysis: SEM, Scanning Electron Microscopy
Substrates
| Si(001) |
| Silicon |
Notes
| 1225 |