Publication Information

Title: Analysis of NbN thin film deposition by plasma-enhanced ALD for gate electrode application

Type: Journal

Info: Semicond. Sci. Technol. 25 (2010) 075009 (7pp)

Date: 2010-06-18

DOI: http://dx.doi.org/10.1088/0268-1242/25/7/075009

Author Information

Name

Institution

Fraunhofer Institute for Integrated Systems and Device Technology (IISB)

Fraunhofer Institute for Integrated Systems and Device Technology (IISB)

Fraunhofer Institute for Integrated Systems and Device Technology (IISB)

Films

Deposition Temperature Range N/A

0-0-0

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

SOPRA SE-5

Resistivity, Sheet Resistance

Four-point Probe

Unknown

Bonding States

XPS, X-ray Photoelectron Spectroscopy

Unknown

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Unknown

Resistivity, Sheet Resistance

Ellipsometry

Unknown

Substrates

Keywords

Gate Metal

Notes

SE model for NbN

64

Disclaimer

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