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In Situ Control of Oxygen Vacancies in TaOx Thin Films via Plasma-Enhanced Atomic Layer Deposition for Resistive Switching Memory Applications
Type:
Journal
Info:
ACS Appl. Mater. Interfaces, 2017, 9 (15), pp 13286-13292
Date:
2017-03-28
Author Information
| Name | Institution |
|---|---|
| Konstantin V. Egorov | Moscow Institute of Physics and Technology |
| Dmitry S. Kuzmichev | Moscow Institute of Physics and Technology |
| Pavel S. Chizhov | Moscow State University |
| Yuri Yu. Lebedinskii | Moscow Institute of Physics and Technology |
| Cheol Seong Hwang | Seoul National University |
| Andrey M. Markeev | Moscow Institute of Physics and Technology |
Films
Plasma Ta2O5
Thermal Ta2O5
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Chemical Composition, Impurities
Analysis: TOF-SIMS, Time of Flight Secondary Ion Mass Spectrometry
Characteristic: Electrical Properties
Analysis: I-V, Current-Voltage Measurements
Characteristic: Resistive Switching
Analysis: -
Substrates
| TiN |
| Silicon |
Notes
| 994 |