Publication Information

Title: Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications

Type: Journal

Info: Journal of The Electrochemical Society, 156 (9) H734-H739 (2009)

Date: 2009-06-03

DOI: http://dx.doi.org/10.1149/1.3166184

Author Information

Name

Institution

State University of New York at Albany

State University of New York at Albany

Films

Deposition Temperature = 85C

13395-16-9

1333-74-0

Plasma Ru using Custom

Deposition Temperature = 300C

0-0-0

7664-41-7

Plasma TaNx using Custom

Deposition Temperature = 300C

169896-41-7

7664-41-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Chemical Composition, Impurities

AES, Auger Electron Spectroscopy

Perkin Elmer PHI600

Chemical Composition, Impurities

NRA, Nuclear Reaction Analysis

Dynamitron linear particle accelerator

Conformality, Step Coverage

SEM, Scanning Electron Microscopy

LEO 1550

Conformality, Step Coverage

TEM, Transmission Electron Microscope

JEOL 2010F

Microstructure

FIB, Focused Ion Beam

FEI 200 FIB

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

Scintag XDS 2000

Resistivity, Sheet Resistance

Four-point Probe

Signatone SYS-301 resistivity probing system

Adhesion

Scotch Tape Test

Custom

Substrates

Ru

Ta

TaN

SiO2

Keywords

Interconnect

Seed Layer

Notes

744

Disclaimer

I am sure there are papers I have not found. I am sure there is an occasional typo or omission in the database entries. I have hundreds of pre-2009 papers yet to add. As a result, the information provided is not perfect and not complete. Don't blame Plasma-ALD-Guy if the use of information on this site does not work out for you. If you know of publications I have missed or a database entry is wrong, send me an email at: plasma-ald-guy@plasma-ald.com

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