Evaluation of plasma parameters on PEALD deposited TaCN

Type:
Journal
Info:
Microelectronic Engineering 107 (2013) 156 - 160
Date:
2012-09-12

Author Information

Name Institution
Fabien PiallatSTMicroelectronics
Virginie BeuginCEA - LETI MINATEC
Rémy GassilloudCEA - LETI MINATEC
Philippe MichallonCEA - LETI MINATEC
Laurent DussaultGrenoble-CNRS-Université Joseph Fourier
Bernard PelissierGrenoble-CNRS-Université Joseph Fourier
Timo AsikainenASM Microchemistry Oy
Jan Willem MaesASM Microchemistry Oy
François MartinCEA - LETI MINATEC
Pierre MorinSTMicroelectronics
Christophe ValléeGrenoble-CNRS-Université Joseph Fourier

Films


Film/Plasma Properties

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity

Characteristic: Morphology, Roughness, Topography
Analysis: XRR, X-Ray Reflectivity

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy

Substrates

Si(111)
SiO2

Notes

647