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Low resistivity HfNx grown by plasma-assisted ALD with external rf substrate biasing
Type:
Journal
Info:
J. Mater. Chem. C, 2018, 6, 3917-3926
Date:
2018-03-12
Author Information
| Name | Institution |
|---|---|
| Saurabh Karwal | Eindhoven University of Technology |
| Marcel A. Verheijen | Eindhoven University of Technology |
| B. L. Williams | Eindhoven University of Technology |
| Tahsin Faraz | Eindhoven University of Technology |
| Erwin (W.M.M.) Kessels | Eindhoven University of Technology |
| Mariadriana Creatore | Eindhoven University of Technology |
Films
Plasma HfNx
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Uniformity
Analysis: Ellipsometry
Characteristic: Optical Properties
Analysis: Ellipsometry
Characteristic: Resistivity, Sheet Resistance
Analysis: Ellipsometry
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: HAADF, High-Angle Annular Dark Field
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Electron Diffraction
Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Stress
Analysis: Wafer Curvature
Substrates
| SiO2 |
Notes
| 450C chuck corresponds to 340C substrate according to SE. |
| 1295 |