Publication Information

Title: Plasma Enhanced Atomic Layer Deposition of TaN Films for Advanced Interconnects

Type: Conference Proceedings

Info: ECS Transactions, 33 (2) 169-176 (2010)

Date: 2010-07-08

DOI: http://dx.doi.org/10.1149/1.3485253

Author Information

Name

Institution

Applied Materials

Applied Materials

Applied Materials

Applied Materials

Applied Materials

Films

Plasma TaNx using Unknown

Deposition Temperature Range = 150-350C

511292-99-2

7440-37-1

1333-74-0

Plasma TaNx using Unknown

Deposition Temperature Range = 150-350C

511292-99-2

1333-74-0

Thermal TaNx using Unknown

Deposition Temperature Range N/A

511292-99-2

7664-41-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Resistivity, Sheet Resistance

Four-point Probe

Unknown

Density

XRR, X-Ray Reflectivity

Unknown

Dewetting

SEM, Scanning Electron Microscopy

Unknown

Diffusion Barrier Properties

Four-point Probe

Unknown

Compositional Depth Profiling

AES, Auger Electron Spectroscopy

Unknown

Conformality, Step Coverage

TEM, Transmission Electron Microscope

Unknown

Morphology, Roughness, Topography

SEM, Scanning Electron Microscopy

Unknown

Substrates

Silicon

Keywords

Interconnect

Diffusion Barrier

Plasma vs Thermal Comparison

Notes

Unknown direct capacitively coupled plasma.

730

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