Publication Information

Title: The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications

Type: Conference Proceedings

Info: Mat. Res. Soc. Symp. Proc. Vol. 766 E10.4.1

Date: 2003-01-01

DOI: http://dx.doi.org/10.1557/PROC-766-E10.4

Author Information

Name

Institution

State University of New York at Albany

State University of New York at Albany

Films

Deposition Temperature Range N/A

169896-41-7

1333-74-0

Deposition Temperature Range N/A

169896-41-7

7664-41-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Compositional Depth Profiling

AES, Auger Electron Spectroscopy

Unknown

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Unknown

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

Unknown

Resistivity, Sheet Resistance

Four-point Probe

Unknown

Conformality, Step Coverage

SEM, Scanning Electron Microscopy

Unknown

Thickness

XRR, X-Ray Reflectivity

Unknown

Barrier Characteristics

RBS, Rutherford Backscattering Spectrometry

Unknown

Substrates

Si(100)

SiO2

Keywords

Diffusion Barrier

Notes

Si(100) samples HF cleaned.

Barrier test samples Ar annealed 450, 550, and 650C.

53

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