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Plasma-enhanced atomic layer deposition of Ta and Ti for interconnect diffusion barriers
Type:
Journal
Info:
J. Vac. Sci. Technol. B 18(4), Jul/Aug 2000
Date:
2000-05-12
Author Information
| Name | Institution |
|---|---|
| S. M. Rossnagel | IBM |
| A. Sherman | Sherman and Associates |
| F. Turner | Sherman and Associates |
Films
Film/Plasma Properties
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Characteristic: Conformality, Step Coverage
Analysis: SEM, Scanning Electron Microscopy
Substrates
| SiO2 |
Notes
| SiO2 substrates cleaned with acetone, alcohol, DI rinse, and nitrogen dry. |
| Ta and Ti films can rapidly oxidize in air perhaps due to PEALD Ta and Ti not being fully dense. |
| Calculates increase in via resistance for increasing liner thickness. |
| 78 |