Publication Information

Title: Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing

Type: Journal

Info: Microelectronic Engineering 147 (2015) 239 - 243

Date: 2015-04-08

DOI: http://dx.doi.org/10.1016/j.mee.2015.04.059

Author Information

Name

Institution

Hanyang University

Hanyang University

Hanyang University

Inha University

Korea University

Hanyang University

Films

Plasma Al2O3 using Unknown

Deposition Temperature = 350C

1333-74-0

75-24-1

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Interface Trap Density

C-V, Capacitance-Voltage Measurements

MS-TEC Probe Station

Hysteresis

C-V, Capacitance-Voltage Measurements

MS-TEC Probe Station

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

Park Systems, XE-100

Leakage Current

I-V, Current-Voltage Measurements

MS-TEC Probe Station

Breakdown Voltage

I-V, Current-Voltage Measurements

MS-TEC Probe Station

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

Rigaku Smartlab

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Thermo VG-Scientific theta probe

Substrates

4H n-SiC(0001)

Keywords

Notes

522

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