Advanced characterizations of fluorine-free tungsten film and its application as low resistance liner for PCRAM
Type:
Journal
Info:
Materials Science in Semiconductor Processing 71 (2017) 433-440
Date:
2017-08-27
Author Information
Name | Institution |
---|---|
Ph. Rodriguez | Grenoble Alps University (UGA) |
R. Famulok | Grenoble Alps University (UGA) |
Y. Le Friec | STMicroelectronics |
J.-Ph. Reynard | STMicroelectronics |
B.-N. Bozon | Applied Materials |
F. Boyer | Grenoble Alps University (UGA) |
K. Dabertrand | STMicroelectronics |
C. Jahan | Grenoble Alps University (UGA) |
S. Favier | Grenoble Alps University (UGA) |
Y. Mazel | Grenoble Alps University (UGA) |
B. Previtali | Grenoble Alps University (UGA) |
P. Gergaud | Grenoble Alps University (UGA) |
F. Nemouchi | Grenoble Alps University (UGA) |
Films
Plasma W
Film/Plasma Properties
Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Compositional Depth Profiling
Analysis: PPTOFMS, Plasma Profiling Time Of Flight Mass Spectrometry
Characteristic: Compositional Depth Profiling
Analysis: WDXRF, Wavelength Dispersive X-ray Fluorescence
Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Conformality, Step Coverage
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Characteristic: Contact Resistance
Analysis: Two-point Probe
Substrates
SiO2 |
W |
Notes
1065 |