Publication Information

Title: Growth kinetics and initial stage growth during plasma-enhanced Ti atomic layer deposition

Type: Journal

Info: J. Vac. Sci. Technol. A 20(3), May/Jun 2002

Date: 2002-02-15

DOI: http://dx.doi.org/10.1116/1.1469009

Author Information

Name

Institution

IBM

IBM

Films

Plasma Ti using Custom

Deposition Temperature Range N/A

7550-45-0

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Deposition Kinetics, Reaction Mechanism

QCM, Quartz Crystal Microbalance

Inficon

Gas Phase Species

QMS, Quadrupole Mass Spectrometer

Inficon Quadrex 200

Plasma Species

OES, Optical Emission Spectroscopy

EG&G Optical Multichannel Analyzer III

Chemical Composition, Impurities

RBS, Rutherford Backscattering Spectrometry

Unknown

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Unknown

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

TEM, Transmission Electron Microscope

Unknown

Conformality, Step Coverage

TEM, Transmission Electron Microscope

Unknown

Substrates

Pt

Cu

Al

Silicon

Amorphous C

Keywords

Interconnect

Notes

Nice reaction kinetics discussion.

H2 plasma can etch Si or amorphous C.

88

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