Publication Information

Title: Formation of Tantalum Carbide and Nitride Phases in Atomic Layer Deposition Using Hydrogen Plasma and tert-Butylimidotris( diethylamido)-tantalum (TBTDET), and its Effect on Material Properties

Type: Journal

Info: Chem. Vap. Deposition 2008, 14, 334–338

Date: 2008-12-16

DOI: http://dx.doi.org/10.1002/cvde.200806702

Author Information

Name

Institution

Pohang University of Science and Technology (POSTECH)

Pohang University of Science and Technology (POSTECH)

Films

Deposition Temperature Range = 100-400C

169896-41-7

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

VG Scientific ESCALAB 220iXL

Thickness

SEM, Scanning Electron Microscopy

JEOL JSM-840A

Resistivity, Sheet Resistance

Four-point Probe

Unknown

Chemical Composition, Impurities

NMR, Nuclear Magnetic Resonance

Bruker DSX 400MHz

Chemical Composition, Impurities

FTIR, Fourier Transform InfraRed spectroscopy

Nicolet 6700

Chemical Composition, Impurities

AES, Auger Electron Spectroscopy

ULVAC PHI Inc., PHI 700

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

MAC Scientific Co., M18XHF

Substrates

SiO2

Keywords

Gate Metal

Plasma-Enhanced Atomic Layer Deposition

Tantalum Nitride

Notes

TBTDET vapor pressure information with reference.

27

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