Interface and plasma damage analysis of PEALD TaCN deposited on HfO2 for advanced CMOS studied by angle resolved XPS and C-V

Type:
Journal
Info:
Applied Surface Science 303 (2014) 388 - 392
Date:
2014-03-02
DOI:
http://dx.doi.org/10.1016/j.apsusc.2014.03.011

Author Information

Name Institution
Fabien PiallatSTMicroelectronics
Virginie BeuginSTMicroelectronics
Rémy GassilloudCEA - LETI MINATEC
Laurent DussaultLTM-CNRS, Laboratoire des technologies de la Microélectronique
Bernard PelissierLTM-CNRS, Laboratoire des technologies de la Microélectronique
Charles LerouxCEA - LETI MINATEC
Pierre CaubetSTMicroelectronics
Christophe ValléeLTM-CNRS, Laboratoire des technologies de la Microélectronique

Films

Plasma TaCN

Hardware used: ASM EmerALD
TBTDET, tert-butylimido tris(diethylamino)tantalum, Ta[NEt2]3[=N-t-Bu)3]
CAS#: 169896-41-7
Where to buy precursor
H2, Hydrogen
CAS#: 1333-74-0

Where to buy onsite generators

Deposition Temperature = 325C

Thermal HfO2

Hardware used: Unknown
Hafnium Tetrachloride, HfCl4
CAS#: 13499-05-3
Where to buy precursor
H2O, Water
CAS#: 7732-18-5
Deposition Temperature = 350C

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo VG-Scientific theta probe

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Substrates

HfO2

Notes

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