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Interface Properties of Nickel-silicide Films Deposited by Using Plasma-assisted Atomic Layer Deposition
Type:
Journal
Info:
Journal of the Korean Physical Society, Vol. 55, No. 3, pp. 1153 - 1157
Date:
2009-01-17
Author Information
| Name | Institution |
|---|---|
| Kwang-Man Lee | Jeju National University |
| Chang Young Kim | Jeju National University |
| Chi Kyu Choi | Jeju National University |
| Sang-Won Yun | Kyungpook National University |
| Jong-Bong Ha | Kyungpook National University |
| Jung-Hee Lee | Kyungpook National University |
| Jeong Yong Lee | Korea Advanced Institute of Science and Technology |
Films
Plasma Ni
Film/Plasma Properties
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Compositional Depth Profiling
Analysis: AES, Auger Electron Spectroscopy
Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Electron Diffraction
Substrates
| Si(100) |
Notes
| Unspecified "Bis-Ni precursor" |
| 745 |