Publication Information

Title: Characteristics of TiN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Method

Type: Journal

Info: Jpn. J. Appl. Phys. Vol. 42 (2003) pp. L414-L416

Date: 2003-02-27

DOI: http://dx.doi.org/10.1143/JJAP.42.L414

Author Information

Name

Institution

Hanyang University

Pusan National University

Hanyang University

Films

Plasma TiN using Custom

Deposition Temperature Range N/A

3275-24-9

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Resistivity, Sheet Resistance

Four-point Probe

Unknown

Compositional Depth Profiling

AES, Auger Electron Spectroscopy

Unknown

Chemical Composition, Impurities

AES, Auger Electron Spectroscopy

Unknown

Bonding States

XPS, X-ray Photoelectron Spectroscopy

Unknown

Conformality, Step Coverage

TEM, Transmission Electron Microscope

Unknown

Substrates

SiO2

Keywords

Diffusion Barrier

Notes

94

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