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Plasma-Enhanced Atomic Layer Deposition of Tantalum Nitrides Using Hydrogen Radicals as a Reducing Agent
Type:
Journal
Info:
Electrochemical and Solid-State Letters, 4 (4) C17-C19 (2001)
Date:
2001-02-09
Author Information
| Name | Institution |
|---|---|
| Jin-Seong Park | Korea Advanced Institute of Science and Technology |
| Min-Jung Lee | Korea Advanced Institute of Science and Technology |
| Choon-Soo Lee | Genitech Co., Ltd. |
| Sang-Won Kang | Korea Advanced Institute of Science and Technology |
Films
Plasma TaNx
Film/Plasma Properties
Characteristic: Resistivity, Sheet Resistance
Analysis: -
Characteristic: Conformality, Step Coverage
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Microstructure
Analysis: XRD, X-Ray Diffraction
Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Characteristic: Density
Analysis: RBS, Rutherford Backscattering Spectrometry
Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Substrates
Notes
| 1224 |