Publication Information

Title: Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices

Type: Journal

Info: Applied Physics Letters 106, 082107 (2015)

Date: 2015-02-17

DOI: http://dx.doi.org/10.1063/1.4913715

Author Information

Name

Institution

Technion-Israel Institute of Technology

Technion-Israel Institute of Technology

Lam Research Corporation

Lam Research Corporation

Lam Research Corporation

Lam Research Corporation

Lam Research Corporation

Lam Research Corporation

Technion-Israel Institute of Technology

Films

Plasma WC using Lam ALTUS

Deposition Temperature = 150C

Unknown

1333-74-0

Plasma WCN using Lam ALTUS

Deposition Temperature = 150C

Unknown

7664-41-7

1333-74-0

Thermal WCN using Lam ALTUS

Deposition Temperature = 400C

Unknown

7664-41-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Thermo VG Sigma Probe

Bonding States

XPS, X-ray Photoelectron Spectroscopy

Thermo VG Sigma Probe

Flat Band Voltage

C-V, Capacitance-Voltage Measurements

HP 4284A LCR

Doping Density

C-V, Capacitance-Voltage Measurements

HP 4284A LCR

Work Function

C-V, Capacitance-Voltage Measurements

HP 4284A LCR

Thickness

Ellipsometry

Unknown

Continuity

TEM, Transmission Electron Microscope

FEI Titan S 80-300 TEM/STEM

Thickness

TEM, Transmission Electron Microscope

FEI Titan S 80-300 TEM/STEM

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

TEM, Transmission Electron Microscope

FEI Titan S 80-300 TEM/STEM

Interfacial Layer

TEM, Transmission Electron Microscope

FEI Titan S 80-300 TEM/STEM

Substrates

SiO2

Keywords

Gate Metal

Notes

Precursor details omitted. Plasma films used precursor containing W, C, N, H, and O while thermal films used a precursor with W, C, N, and H.

Oxygen containing precursors might be MDNOW (methylcyclopentadienyl-dicarbonyInitrosyl-tungsten) or EDNOW (ethylcyclopentadienyl-dicarbonyInitrosyl-tungsten) discussed in United States Patent Application 20150024592 assigned to Lam Research.

308

Disclaimer

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