Plasma-enhanced atomic layer deposition of tantalum nitride thin films using tertiary-amylimido-tris(dimethylamido)tantalum and hydrogen plasma

Type:
Journal
Info:
Journal of Electroceramics, v. 36, n. 1, p. 165--169 (2016)
Date:
2016-01-25

Author Information

Name Institution
Ha-Jin LeePusan National University
Jin-Seong ParkHanyang University
Se-Hun KwonPusan National University

Films


Film/Plasma Properties

Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe

Characteristic: Microstructure
Analysis: XRD, X-Ray Diffraction

Characteristic: Adhesion
Analysis: Tape Test

Characteristic: Diffusion Barrier Properties
Analysis: Anneal

Substrates

SiO2

Notes

771