Publication Information

Title: A study of the impact of in-situ argon plasma treatment before atomic layer deposition of Al2O3 on GaN based metal oxide semiconductor capacitor

Type: Journal

Info: Microelectronic Engineering 147 (2015) 277-280

Date: 2015-04-10

DOI: http://dx.doi.org/10.1016/j.mee.2015.04.067

Author Information

Name

Institution

University of Glasgow

University of Liverpool

University of Cambridge

University of Glasgow

University of Glasgow

University of Glasgow

University of Cambridge

University of Liverpool

University of Glasgow

Films

Other Al2O3 using Unknown

Deposition Temperature = 200C

75-24-1

7732-18-5

7440-37-1

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Capacitance

C-V, Capacitance-Voltage Measurements

Unknown

Hysteresis

C-V, Capacitance-Voltage Measurements

Unknown

Frequency Dispersion

C-V, Capacitance-Voltage Measurements

Unknown

Interface State Density

I-V, Current-Voltage Measurements

Unknown

Substrates

Keywords

Notes

Ar plasma treatment of GaN surface prior to thermal Al2O3 results in improved MOSCAP properties.

313

Disclaimer

I am sure there are papers I have not found. I am sure there is an occasional typo or omission in the database entries. I have hundreds of pre-2009 papers yet to add. As a result, the information provided is not perfect and not complete. Don't blame Plasma-ALD-Guy if the use of information on this site does not work out for you. If you know of publications I have missed or a database entry is wrong, send me an email at: plasma-ald-guy@plasma-ald.com

Follow plasma-ald.com

Follow @PlasmaALDGuy Tweet

Shortcuts



© 2014-2017 plasma-ald.com